The Nexperia PMV65XP,215 MOSFET is a compact, high-efficiency P-Channel Power MOSFET designed for performance in low-power applications. Housed in a space-saving SOT23 (TO-236AB) surface-mount package, it leverages advanced Trench MOSFET technology to offer low on-state resistance and a low threshold voltage—ideal for efficient switching. With a drain-source voltage rating of -20 V and a continuous drain current of -4.3 A, it’s perfect for DC-DC converters, load switches, and battery-powered devices. Whether you’re managing power in portable electronics or optimizing circuit designs, the PMV65XP,215 delivers reliable, energy-efficient switching performance in a miniature form factor.
Features:
- P-Channel Enhancement Mode MOSFET
- Low threshold voltage for efficient switching
- Ultra-low on-state resistance (R<sub>DS(on)</sub>)
- Advanced Trench MOSFET technology
- Compact SOT23 (TO-236AB) SMD package
- Optimized for battery-powered and portable applications
Package Includes:
1 x Nexperia – PMV65XP,215 – Power MOSFET, P Channel, 20 V, 4.3 A, 0.074 ohm, TO-236AB, Surface Mount


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