PMGD290UCEAX-NEXPERIA-Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 725 mA, 725 mA, 0.29 ohm.
Note: Images for reference only.
Specifications:
Channel Type: Complementary N and P Channel
Drain Source Voltage Vds P Channel: 20V
Continuous Drain Current Id P Channel: 725mA
Drain Source On State Resistance P Channel: 0.29ohm
No. of Pins: 6Pins
Power Dissipation P Channel: 445mW
Product Range: –
MSL: –
Drain Source Voltage Vds N Channel: 20V
Continuous Drain Current Id N Channel: 725mA
Drain Source On State Resistance N Channel: 0.29ohm
Transistor Case Style: SOT-363
Power Dissipation N Channel: 445mW
Operating Temperature Max: 150°C
Qualification: –
SVHC: No SVHC (27-Jun-2024)
For detailed specifications, please refer to datasheet in Attachments.
Package Includes:
1 x PMGD290UCEAX-NEXPERIA-Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 725 mA, 725 mA, 0.29 ohm
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